One and two channel LPDDR up to 4 No published JEDEC standard exists. Specification or performance is subject to change without notice. Products and specifications discussed herein are subject to change by Micron without notice. Figure LPDDR to LPDDR Input Signal. Mobile DDR is a type of double data rate synchronous DRAM for mobile computers. A new JEDEC standard JESDE defines a more dramatically revised low-power DDR interface. . In comparison to LPDDR2, LPDDR3 offers a higher data rate, greater bandwidth . JEDEC is working on an LP-DDR5 specification.
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JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint.
No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. By downloading this file the individual agrees not to charge for or resell the resulting material. This specification was created using aspects of the following specifications: Each aspect of the specification was considered and approved by committee ballot s.
DQ byte swapping and DQ bit Swapping are not allowed in the system. Power savings modes are entered and exited through CKE transitions. CKE is considered part of the command code. See Command Truth Table for command code descriptions.
JEDEC 规范 LPDDR3_图文_百度文库
CKE is sampled at the positive Clock edge. CA is considered part of the command code. It is output with read data and input with write data. DM is the input mask signal for write data. For x16 and x32 devices, DM0 is the input data mask signal for the data on DQ DM1 is the input data mask signal for the data on DQ Core power supply Supply Core Power Supply 2: Reference voltage for all data input buffers. These devices contain the following number of bits: The bit CA bus contains command, address, and bank information.
Each command uses one clock cycle, during which command information is transferred on both the positive and negative edge of the clock. These devices also use a double data rate architecture on the DQ pins to achieve high speed operation. Accesses begin with the registration of an Activate command, which is then followed by a Read or Write command. The address and BA bits registered coincident with the Activate command are used to select the row and the bank to be accessed.
The address bits registered coincident with the Read or Write command are used to select the bank and the starting column location for the burst access. The following section provides detailed information covering device initialization, register definition, command description and device operation.
For a complete definition of the device behavior, the information provided by the state diagram should be integrated with the truth tables and timing specification. The truth tables provide complementary information to the state diagram, they clarify the device behavior and the applied restrictions when considering the actual state of all the banks. In these cases an additional MRW command is required to exit either operating mode and return to the Idle state. NOTE 3 Terminated bursts are not allowed.
For these state transitions, the burst operation must be completed before the transition can occur. NOTE 4 Use caution with this diagram. It is intended to provide a floorplan of the possible state transitions and commands to control them, not all details.
In particular, situations involving more than one bank are not captured in full detail. Unless specified otherwise, this procedure is mandatory. Voltage ramp power supply requirements are provided in Table 4. Table 4 — Voltage Ramp Conditions After Noted conditions apply between Ta and power-off controlled or uncontrolled. Tb is the point at which all supply and reference voltages are within their defined operating ranges.
MRW commands can be issued at normal clock frequencies as long as all AC timings are met. As the memory output buffers are not properly configured by Te, some AC parameters must have relaxed timings before the system is appropriately configured.
This command is used to calibrate output impedance over process, voltage, and temperature.
Specifically, MR1, MR2, and Lpder3 must be set to configure the memory for the target frequency and memory configuration. After the initialization sequence is complete, the device is ready for any valid command. If the RESET command is issued before or after the power-up initialization sequence, the re-initialization procedure specificstion begin at Td. Tx is the point where any power supply drops below the minimum value specified. Tz is the point where all power supplies are below mV.
After Tz, the device is powered off see Table 1. Table 6 — Power Supply Conditions Between At Tx, when the power supply drops below the minimum values specified, all power supplies must be turned off and all power-supply current capacity must be at zero, except for any static charge remaining in the system. During this period, the relative voltage between power supplies is uncontrolled.
An uncontrolled power-off sequence can occur a maximum of times over the life of the device.
A Mode Register Read command is used to read a mode register. A Mode Register Write command is used to write a mode register. NOTE 5 See vendor device opddr3 for details on vendor-specific mode registers.
NOTE 6 Writes to read-only registers shall have no impact on the functionality of the device. RZQ self test not supported 01B: It is recommended that the assembly error is corrected. In either case, the system may not function as intended. NOTE 4 In the case of the ZQ self-test returning a value of 11b, this result indicates that the device has detected a resistor connection to the ZQ pin. However, this result cannot be used to validate the ZQ resistor value or that the ZQ resistor tolerance meets the specufication limits i.
BL8 default All others: C0 input is not present on CA bus. It is implied zero. The burst address represents C2 – C0. OP0 has changed at any time since the last read of MR4. NOTE 6 For specified operating temperature range and maximum operating temperature refer to Table 31 on page Prevailing clock frequency spec and related setup and hold timings shall remain unchanged. Calibration command after initialization 0xAB: Short calibration Code 0xC3: In both cases, the ZQ l;ddr3 shall not change after power is applied to the device.
X is do not care for a particular segment. The bank addresses BA0 to BA2 are used to select the desired bank.
Row addresses are used to determine which row to activate in the selected bank. There are two rules: The rules are as follows: The number of clocks in a tFAW period is dependent upon the clock frequency, which may vary.
If the clock frequency is not changed over this period, converting to clocks is done by dividing tFAW[ns] by tCK[ns], and rounding up to the next integer value. If the clock frequency is changed during the tFAW period, the rolling tFAW window may be calculated in clock cycles by adding up the time spent in each clock period.
See section related to power down for timing diagrams related to the CKE pin. Command Input Setup and Hold Timing 4.
A single Read or Write Command will initiate a burst read or write operation on successive clock cycles. Burst interrupts are not allowed. The first bit of the burst is synchronized with the first rising edge of the data strobe. Each subsequent data-out appears on each DQ pin, edge-aligned with the data strobe. The RL is programmed in the mode registers.
NOTE 2 An effective burst length of 8 is shown. Figure 14 — Seamless Burst Read: This operation is supported as long as the banks specicication activated, whether the accesses read the same or different banks. Burst data is sampled on successive edges of the DQS until the 8-bit burst length speciifcation completed. The seamless burst write operation jeedc supported by enabling a write command every four clocks for? This operation is allowed for any activated bank.
Each DM can mask its respective DQ for any given cycle of the burst.