BUZ 73 L. V. 7 A. Ω. TO AB. CSA2. Maximum Ratings. Parameter. Symbol. Values. Unit. Continuous drain current. TC = 28 °C. ID. 7. A. BUZ73 from Motorola Solutions, Inc.. Find the PDF Datasheet, Specifications and Distributor Information. BUZ73 Datasheet, BUZ73 PDF, BUZ73 Data sheet, BUZ73 manual, BUZ73 pdf, BUZ73, datenblatt, Electronics BUZ73, alldatasheet, free, datasheet, Datasheets, .
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Screw tools must not touch the plastic package. The sensitivity to static charg- es increases with decreasing chip area and the resulting, smaller input capacitance C ss.
By con- necting several thousand individual transistors in parallel on one chip, excellent utilization of the silicon is possible.
The hole has dxtasheet be levelled down. The bypass switch and resync or reset button are datasheett on the enclosure. With the maximum diameter, the contact surface must be flat up to the hole edge. The values of the dc voltage between gate-source and drain-source connections, as well as the measuring frequency are specified.
Thickness and doping concentra- tion of this layer are thus decisive for the blocking capability of the transistor. The fatasheet tor L decouples the dc supply. The aluminum source layer connects the individual source cells through the holes in dxtasheet gate grid and, at the same time, acts as bonding pad. A comma in the outline drawings and tables as well as in the individual data sheets represents the decimal point.
Electrical characteristics 23 3. If one of these limits is exceeded, it can lead to the destruction of the component, even if the other limits are not fully utilized.
For dqtasheet mounting of transistors in the cases TO TO 3TOand TOnote the increased thermal resistance between transistor and heat sink.
This desire for reliability is also seen in the transient voltage protection in the solid state relay section of circuit and in the wiring of the board directly to the off-board switch and pushbutton rather than using connectors.
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In or- der to protect the transistors from static charges during shipping, they are delivered in anti-static packaging. The mounting torque should not exceed 60 Ncm with the insulated construction. Optimum design and trend-setting new discoveries in MOS technology resulted in new power transistors with hitherto unknown switching characteristics.
A value greater than the gate threshold voltage results in a low-resistive drain- source path. Terms of delivery and rights to change design reserved. In many cases, these electrical characteristics are supplemented by limit values. This ensures that the current is dis- tributed through the region between two cells, resulting in good utilization of the silicon.
Absolute maximum ratings catasheet 2. The information in this data book describes the type of component datadheet shall not be considered as assured characteristics. Search the history of over billion web pages on the Internet. Parallel operation with gate resistors Parallel operation with separate driver 1. If it is necessary to bend the leads by hand, the lead must be held with pliers between the bending point and the header without causing notches. A Germanium or other material with an energy band gap of 0.
Circuitry and parameter are specified.
A positive current value corresponds to a positive cur- rent which enters the component at the terminal defined by the first index, e. Dztasheet circuit diagram to measure the reverse transfer capacitance C rss when using a bridge without dc passage.
BUZ73 Datasheet(PDF) – Siemens Semiconductor Group
The duty cycle is the same as the one specified for the transistor. Type Designation Code for Discrete Semiconductors This type designation code applies to discrete semiconductor devices – bjz73 opposed to inte- grated circuits multiples of such devices, semiconductor chips, and darlington transistors. For the purposes of this notice, copying binary data resulting from program files, including assembly source code and object hex files into semiconductor memories for personal, nonprofit educational or other noncommercial use datxsheet not considered republishing.
The drive power is not dependent on the switched output power, so that the drive circuit can be of the same de- sign for a 10W stage, as for a W stage. The drain connection is conductively connected to the mounting flange. By utilizing or relying on software, firmware, hardware, design, service,information, or advice provided, mentioned, or made reference to in these pages, the user takes responsibility to assume all risk and associated with said activity and hold Richard Cappels harmless in the event of any loss or expense associated with said activity.
The power supply filter capacitor is a mamoth uf rated at 40 volts so that it would be operated wll below its voltage and ripple current ratings, and can even loose a large percentage of its inital capacitance because of aging without affecting circuit operation.
Use of information presented on this site for personal, nonprofit educational and noncommercial use is encouraged, but unless explicitly stated with respect to particular material, the material itself may not be republished or used directly for commercial purposes. Dataheet are pulse width, duty cycle, and case temperature. For information, please contact NTN Engineering.
Mounting instructions 29 7. Should the source connection potential be located above the one of the drain connection, the transistor will function as a bipolar diode; i. Absolute maximum ratings The limits stated in the data sheets are absolute limit values. PDF calcul et dataasheet de roulement, dure de vie roulement moteur lectrique, calcul dimensionnement roulement, exercices corrigs sur les roulements pdf, calcul de roulement exercice, calcul roulement excel, calcul charge dynamique roulement, calcul charge radiale roulement, Tlcharger Dimensionnement de roulement 1 Calcul de dure de vie MoodleBall and Roller Bearings CAD data of model numbers given in the catalog is available as an electronic catalog.
Countersinking may not show a diameter larger than 4 mm.