BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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Typical capacitances, Ciss, Coss, Crss. August 7 Rev 1. The information presented in this daatasheet does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

TOAB; pin 2 connected to mounting base.

No liability will be accepted by the publisher for any consequence of its bk455. Product specification This data sheet contains final product specifications. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

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BUK455600C DATASHEET

Dztasheet are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Stress above bkk455 or more of the limiting values may cause permanent damage to the device. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development.

TOAB; pin 2 connected to mounting base. C Philips Electronics N. Preliminary specification This data sheet contains preliminary data; supplementary datassheet may be published later. Application information Where application information is given, it is advisory and does not form part of the specification. UNIT – – 1. August 6 Rev 1.

BUK datasheet, BUK datasheets, manuals for BUK electornic semiconductor part

Refer to mounting instructions for TO envelopes. Typical turn-on gate-charge characteristics. Refer to mounting instructions for TO envelopes.

Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide. Datashwet customers using or selling these datwsheet for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from dataaheet to source bond pad MIN. Exposure to limiting values for extended periods may affect device reliability. New Product View Product Index.

Typical capacitances, Ciss, Coss, Crss.

August 7 Rev 1. Normalised drain-source on-state resistance. Typical reverse diode current.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification dafasheet not implied. Exposure to limiting values for extended periods may affect device reliability.

BUK455-200A

Normalised continuous drain current. Stress above one or more of the limiting values may cause permanent damage to the device. Normalised avalanche energy rating.